Lattice distortion in a strain-compensatedSi1−x−yGexCylayer on silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.17185/fulltext
Reference12 articles.
1. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
2. Bond lengths around isovalent impurities and in semiconductor solid solutions
3. Bond-length relaxation in crystallineSi1−xGexalloys: An extended x-ray-absorption fine-structure study
4. Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers
5. The absolute “lattice parameter” of crystals with defects measured with X-ray methods
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