Vacancies, dislocations, and carbon interstitials in Si-Reference-Cited by-同舟云学术

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Vacancies, dislocations, and carbon interstitials in Si

Published:1987-01-15 Issue:2 Volume:35 Page:864-869
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Van Vechten J. A.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.864/fulltext

Reference16 articles.

1. New vacancy-related defects inn-type silicon

2. Infrared Studies of Defect Production inn-Type Si: Irradiation-Temperature Dependence

3. EPR Observation of the Isolated Interstitial Carbon Atom in Silicon

4. EPR study of neutron-irradiated silicon: A positive charge state of the〈100〉split di-interstitial

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3. Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs;2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2019-04

4. Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy;Solid-State Electronics;2015-10

5. Towards single-trap spectroscopy: Generation-recombination noise in UTBOX SOI nMOSFETs;physica status solidi (c);2015-01-23

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