Rigid-band electronic structure of scandium nitride across the n -type to p -type carrier transition regime-Reference-Cited by-同舟云学术

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Rigid-band electronic structure of scandium nitride across the n -type to p -type carrier transition regime

Published:2019-04-24 Issue:16 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Nayak Sanjay,Baral Madhusmita,Gupta Mukul,Singh Jaspreet,Garbrecht Magnus,Ganguli Tapas,Shivaprasad S. M.,Saha Bivas

Funder

Jawaharlal Nehru Centre for Advanced Scientific Research

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.161117/fulltext

Reference61 articles.

1. Controlling Defects in Graphene for Optimizing the Electrical Properties of Graphene Nanodevices

2. Critical size for defects in nanostructured materials

3. The Effect of VMoS3 Point Defect on the Elastic Properties of Monolayer MoS2 with REBO Potentials

4. First-Principles Study of Point Defects in GaAs/AlAs Superlattice: the Phase Stability and the Effects on the Band Structure and Carrier Mobility

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2. Quasiclassical Anderson transition and thermally activated percolative charge transport in single-crystalline ScN;Physical Review B;2024-04-25

3. First-principles study of hydrogen- and oxygen-related complexes in ScN;Journal of Applied Physics;2024-03-22

4. Surface scattering-dependent electronic transport in ultrathin scandium nitride films;Applied Physics Letters;2023-11-06

5. Demonstration of compensated n-type scandium nitride Schottky diodes;Journal of Physics D: Applied Physics;2023-01-31

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