Electronic structure of theSi(110)−(16×2)surface: High-resolution ARPES and STM investigation-Reference-Cited by-同舟云学术

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Electronic structure of theSi(110)−(16×2)surface: High-resolution ARPES and STM investigation

Published:2009-01-08 Issue:4 Volume:79 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sakamoto Kazuyuki,Setvin Martin,Mawatari Kenji,Eriksson P. E. J.,Miki Kazushi,Uhrberg R. I. G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.045304/fulltext

Reference34 articles.

1. Dysprosium silicide nanowires on Si(110)

2. Magnetic iron silicide nanowires on Si(110)

3. Growth of metallic nanowires on anisotropic Si substrates: Pb on vicinal Si(001), Si(755), Si(533), and Si(110)

4. Si(110)5×2−Au: A metallic chain structure

5. Rearrangement of up-and-down terrace in Si(110) “16×2” induced by Sn adsorption

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1. Self-organized formation of unidirectional and quasi-one-dimensional metallic Tb silicide nanowires on Si(110);Applied Surface Science;2023-01

2. Charge Localization Induced by Pentagons on Ge(110);The Journal of Physical Chemistry C;2022-12-28

3. Spin-polarized electrons in atomic layer materials formed on solid surfaces;Progress in Surface Science;2022-08

4. Accessibility of ARPES for Three-dimensionally Architected Si{111}7×7 Facet Surfaces on Micro-patterned Si(110);e-Journal of Surface Science and Nanotechnology;2022-07-28

5. Complete three-dimensional structure of Bi-adsorbed Si(110) surface: Discovery of heavily reconstructed Si(110) substrate;Physical Review Research;2021-12-08

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