Self-organized formation of unidirectional and quasi-one-dimensional metallic Tb silicide nanowires on Si(110)-Reference-Cited by-同舟云学术

Self-organized formation of unidirectional and quasi-one-dimensional metallic Tb silicide nanowires on Si(110)

Published:2023-01 Issue: Volume:607 Page:154875
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Appelfeller Stephan^ORCID,Franz Martin^ORCID,Karadag Murat,Kubicki Milan^ORCID,Zielinski Robert^ORCID,Krivenkov Maxim^ORCID,Varykhalov Andrei^ORCID,Preobrajenski Alexei,Dähne Mario

Funder

Deutsche Forschungsgemeinschaft

VINNOVA

Vetenskapsrådet

Helmholtz-Zentrum Berlin für Materialien und Energie

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. Terbium-silicon system;Bulanova;Z. Met.kd.,1999

2. Growth and electronic properties of Tb silicide layers on Si(111);Franz;J. Vac. Sci. Technol. A,2016

3. Tb silicide nanowire growth on planar and vicinal Si(001) surfaces;Appelfeller;Surf. Sci.,2015

4. Growth and characterization of tb silicide nanostructures on Si(hhk) substrates;Appelfeller;Phys. Rev. Mater.,2019

5. Continuous crossover from two-dimensional to one-dimensional electronic properties for metallic silicide nanowires;Appelfeller;Phys. Rev. B,2020

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