Influence of hydrostatic pressure on cation vacancies in GaN, AlN, and GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.075210/fulltext
Reference18 articles.
1. Atomic geometry and electronic structure of native defects in GaN
2. Effects of Strain and Local Charge on the Formation of Deep Defects in III-V Ternary Alloys
3. Optical and structural properties of III-V nitrides under pressure
4. Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects
5. Elastic constants and phonon frequencies of Si calculated by a fast full-potential linear-muffin-tin-orbital method
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