Islands at semiconductor interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.14197/fulltext
Reference23 articles.
1. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques
2. Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high-resolution photoluminescence spectroscopy
3. Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces
4. Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells
5. Optical characterization of interface disorder in multi-quantum well structures
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1. Zero field spin polarization in a two-dimensional paramagnetic resonant tunneling diode;Physical Review B;2011-04-05
2. Optically pumped lasing from a single pillar microcavity with InGaAs/GaAs quantum well potential fluctuation quantum dots;Journal of Applied Physics;2009-03
3. Disorder-induced resonant tunneling in planar quantum-dot nanostructures;Physical Review B;1994-08-15
4. Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures;Physical Review Letters;1994-05-23
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