Heteroepitaxial growth of the intrinsic vacancy semiconductorAl2Se3on Si(111): Initial structure and morphology-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of the intrinsic vacancy semiconductorAl2Se3on Si(111): Initial structure and morphology

Published:2008-08-25 Issue:7 Volume:78 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lu Chih-Yuan,Adams Jonathan A.,Yu Qiuming,Ohta Taisuke,Olmstead Marjorie A.,Ohuchi Fumio S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.78.075321/fulltext

Reference21 articles.

1. The van der Waals epitaxial growth of GaSe on Si(111)

2. Growth of GaSe ultrathin films on Si(111) substrates analyzed by the x-ray standing-wave technique

3. Interaction of Se and GaSe with Si(111)

4. Low-energy photoelectron diffraction structure determination of GaSe-bilayer-passivated Si(111)

5. Chemical passivation of Si(111) capped by a thin GaSe layer

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1. New Alloy of an Al-Chalcogen System: AlSe Surface Alloys on Al(111);ACS Omega;2022-11-29

2. A rechargeable 6-electron Al–Se battery with high energy density;Energy Storage Materials;2021-10

3. Group III selenides: Controlling dimensionality, structure, and properties through defects and heteroepitaxial growth;Journal of Vacuum Science & Technology A;2021-03

4. Synthesis and electronic properties of InSe bi-layer on Si(111);Applied Surface Science;2021-02

5. High-Performance Rechargeable Aluminum–Selenium Battery with a New Deep Eutectic Solvent Electrolyte: Thiourea-AlCl3;ACS Applied Materials & Interfaces;2020-05-04

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