Synthesis and electronic properties of InSe bi-layer on Si(111)-Reference-Cited by-同舟云学术

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Synthesis and electronic properties of InSe bi-layer on Si(111)

Published:2021-02 Issue: Volume:539 Page:148144
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Matetskiy A.V.,Kibirev I.A.,Mihalyuk A.N.,Eremeev S.V.,Zotov A.V.,Saranin A.A.

Funder

Russian Science Foundation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference46 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene;Novoselov;Nature,2005

2. Atomically thin MoS2: A new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010

3. Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations;Zólyomi;Phys. Rev. B,2014

4. Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement;Mudd;Adv. Mater.,2013

5. Thickness-dependent transition of the valence band shape from parabolic to Mexican-hat-like in the MBE grown InSe ultrathin films;Kibirev;Appl. Phys. Lett.,2018

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3. Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices;ACS Applied Nano Materials;2023-08-04

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