Electronic structure ofH/Ge(111)1×1studied by angle-resolved photoelectron spectroscopy
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.193403/fulltext
Reference15 articles.
1. Realistic tight-binding model for chemisorption: H on Si and Ge (111)
2. Ideal unreconstructed hydrogen termination of the Si(111) surface obtained by hydrogen exposure of the √3 × √3 -In surface
3. Electronic structure of the ideally H-terminatedSi(111)−(1×1)surface
4. Si2pCore-Level Spectroscopy of the Si(111)-(1 × 1):H and Si(111)-(1 × 1):D Surfaces: Vibrational Effects and Phonon Broadening
5. Self-energy effects on the surface-state energies of H-Si(111)1×1
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Anisotropic splitting and spin polarization of metallic bands due to spin-orbit interaction at the Ge(111)(3×3)R30∘-Au surface;Physical Review B;2011-07-26
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