Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport-Reference-Cited by-同舟云学术

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Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport

Published:2017-05-24 Issue:20 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lee Y.,Bescond M.,Cavassilas N.,Logoteta D.,Raymond L.,Lannoo M.,Luisier M.

Funder

Aix-Marseille Université

Agence Nationale de la Recherche

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.201412/fulltext

Reference47 articles.

1. Black phosphorus field-effect transistors

2. Sub-10 nm Carbon Nanotube Transistor

3. Single-layer MoS2 transistors

4. How Good Can Monolayer MoS2 Transistors Be?

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1. First-principles quantum treatment of electron–phonon interactions in thin-film nanodevices;AIP Advances;2022-11-01

2. Study of phonon transport across Si/Ge interfaces using Full-Band phonon Monte Carlo simulation;Journal of Computational Electronics;2022-05-10

3. Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches;Physical Review Applied;2020-07-28

4. Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green’s function implementations;Journal of Computational Electronics;2020-07-25

5. Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors;Materials;2019-12-21

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