Hole-plasmon damping on heavily dopedp-type GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.2467/fulltext
Reference26 articles.
1. Conduction-Band Surface Plasmons in the Electron-Energy-Loss Spectrum of GaAs(110)
2. Hydrogen Adsorption on GaAs(110) Studied by Electron-Energy-Loss Spectroscopy
3. Evidence for internal structure of plasmons in electron energy loss spectra
4. Application of high-resolution electron-energy-loss spectroscopy to MBE grown GaAs(100)
5. Azimuthal dependence of the vibrational excitation in Si(111)-(2×1)
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