Spatial variation of plasmon damping near the polar surfaces of InAs and InSb-Reference-Cited by-同舟云学术

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Spatial variation of plasmon damping near the polar surfaces of InAs and InSb

Published:1998-05 Issue:2-3 Volume:405 Page:280-287
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Bell G.R,Jones T.S,McConville C.F

Funder

Royal Society

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference16 articles.

1. Silicon spreading in δ-doped GaAs(100): A high-resolution electron-energy-loss-spectroscopy study

2. Quasi-two-dimensional plasmons of a single δ-doped layer in GaAs studied by high-resolution electron-energy-loss spectroscopy

3. Hole-plasmon damping on heavily dopedp-type GaAs(110)

4. Plasmon excitations and accumulation layers in heavily doped InAs(001)

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1. Probing free carrier plasmons in doped semiconductors using spatially resolved electron energy loss spectroscopy;Physical Review B;2020-11-30

2. Two-fluid hydrodynamic model for semiconductors;Physical Review B;2018-03-13

3. Size-dependent nonlocal effects in plasmonic semiconductor particles;EPL (Europhysics Letters);2017-07-01

4. Dopant and Defect Induced Electronic States at In2O3 Surfaces;Defects at Oxide Surfaces;2015

5. Surface electronic properties of clean and S-terminated InSb(001) and (111)B;Journal of Applied Physics;2008-10-15

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