First-principles study of indium-stabilized {103} facets in Ge quantum dots
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.115408/fulltext
Reference30 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Reconstruction, step-bunching and faceting of a vicinal Si( 100) surface induced by indium adsorption
3. Atomic structure of the Si(103)1 × 1-In surface
4. {310} faceting of the Ge(001) 2 × 1 surface induced by indium
5. Structure and phases of In on Ge(001)
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