Electronic properties of STM-constructed dangling-bond dimer lines on a Ge(001)-(2×1):H surface-Reference-Cited by-同舟云学术

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Electronic properties of STM-constructed dangling-bond dimer lines on a Ge(001)-(2×1):H surface

Published:2012-09-06 Issue:12 Volume:86 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kolmer Marek,Godlewski Szymon,Kawai Hiroyo,Such Bartosz,Krok Franciszek,Saeys Mark,Joachim Christian,Szymonski Marek

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.125307/fulltext

Reference27 articles.

1. Spectroscopy of few-electron single-crystal silicon quantum dots

2. Dangling-bond logic gates on a Si(100)-(2 × 1)–H surface

3. Atomic wire fabrication by STM induced hydrogen desorption

4. Jahn-Teller Distortion in Dangling-Bond Linear Chains Fabricated on a Hydrogen-Terminated Si(100)-2×1Surface

5. Ohm’s Law Survives to the Atomic Scale

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