Cluster growth of Al on stepped and unstepped GaAs(110) at 300 K: A scanning-tunneling-microscopy examination
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.1756/fulltext
Reference27 articles.
1. Chemisorption of Al and Ga on the GaAs (110) surface
2. Al on GaAs(110) interface: Possibility of adatom cluster formation
3. Initial stage of formation of a metal‐semiconductor interface: Al on GaAs(110)
4. Structure of the Al-GaAs(110) interface from an energy-minimization approach
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1. Scanning Probe Microscopy in Catalysis;Journal of Nanoscience and Nanotechnology;2004-09-01
2. Formation of the Al–GaSb(110) interface;Surface Science;1998-07
3. Morphology and growth mode of Al films deposited by chemical vapor deposition from dimethylethylamine alane on GaAs(001)2×4 surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-05
4. Atomic structure of Ga and As atoms on GaAs(110);Physical Review B;1995-10-15
5. Chemical vapor deposition of Al from dimethylethylamine alane on GaAs(100)c(4×4) surfaces;Journal of Applied Physics;1994-09-15
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