Chemisorption of Al and Ga on the GaAs (110) surface
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.570607
Cited by 52 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of the exchange reaction on the electronic structure of GaN/Al junctions;Physical Review B;1998-09-15
2. Density functional studies of aluminum phosphide cluster structures;The Journal of Chemical Physics;1996-12-15
3. Twenty years of semiconductor surface and interface structure determination and prediction: The role of the annual conferences on the physics and chemistry of semiconductor interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07
4. Total-energy calculations of semiconductor surface reconstructions;Surface Science Reports;1992-09
5. Cluster growth of Al on stepped and unstepped GaAs(110) at 300 K: A scanning-tunneling-microscopy examination;Physical Review B;1992-01-15
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