Photoluminescence decay times of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.2861/fulltext
Reference17 articles.
1. The effect of As2and As4molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs
2. Comment on ’’A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy’’
3. Observation of discrete donor-acceptor pair spectra in MBE grown GaAs
4. A model for some defect-related bound exciton lines in the photoluminescence spectrum of GaAs layers grown by molecular beam epitaxy
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