GaAs−AlxGa1−xAsdouble-barrier heterostructure phonon laser: A full quantum treatment-Reference-Cited by-同舟云学术

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GaAs−AlxGa1−xAsdouble-barrier heterostructure phonon laser: A full quantum treatment

Published:2001-09-10 Issue:12 Volume:64 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Camps I.,Makler S. S.,Pastawski H. M.,Foa Torres L. E. F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.125311/fulltext

Reference58 articles.

1. Resonant tunneling in semiconductor double barriers

2. Quantum Electron Devices

3. Observation of intrinsic bistability in resonant tunneling structures

4. Evidence for LO-phonon-emission-assisted tunneling in double-barrier heterostructures

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