Angular distribution ofGa+ions desorbed by 3-keV ion bombardment of GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.11027/fulltext
Reference21 articles.
1. Surface Structure from Angle-Resolved Secondary-Ion Mass Spectrometry: Oxygen on Cu(001)
2. Azimuthal Anisotropies of Dimer Ions Ejected from Ion Bombarded Ni(001)
3. Energy and angle resolved SIMS studies of CO on Ni(001)
4. Coverage dependent structural changes during chlorine adsorption on Ag{110}
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1. Crystallographic azimuthal-angle dependence of the neutral fraction of hydrogen emerging from GaAs (1 1 0);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
2. Energy and angular distributions of sputtered particles;International Journal of Mass Spectrometry and Ion Processes;1994-12
3. Mechanistic analysis from molecular-dynamics simulations: keV-particle-induced desorption from Si{001};Physical Review B;1994-08-15
4. Accommodation of argon and oxygen gases on a GaAs(110) surface under Ar+ ion bombardment;Surface Science;1992-07
5. Angular distribution ofGa+ions desorbed by 3-keV-ion bombardment of GaAs{001}-(2×4);Physical Review B;1991-12-15
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