Stark effect in type-II Ge/Si quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.125318/fulltext
Reference36 articles.
1. Quantum-confined Stark effects of InAs/GaAs self-assembled quantum dot
2. Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots
3. Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots
4. Stark shift in single and vertically coupled type-I and type-II quantum dots
5. Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
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2. Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-03
3. Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells;Semiconductor Physics Quantum Electronics and Optoelectronics;2016-07-06
4. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces;Journal of Applied Physics;2014-05-28
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