Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4875101
Reference36 articles.
1. Silicon Photonics
2. High-performance Ge-on-Si photodetectors
3. Ge hut cluster luminescence below bulk Ge band gap
4. Photoluminescence of Ge∕Si structures grown on oxidized Si surfaces
5. Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy
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1. Evolution of Epitaxial Quantum Dots Formed by Volmer–Weber Growth Mechanism;Crystal Growth & Design;2019-11-21
2. Enhanced photoresponse of Ge/Si nanostructures by combining amorphous silicon deposition and annealing;Journal of Applied Physics;2018-09-07
3. Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures;Advances in Semiconductor Nanostructures;2017
4. Electron and hole separation in Ge nanocones formed on Si1−xGex solid solution by Nd:YAG laser radiation;Applied Surface Science;2015-08
5. Increase of Photoelectric Response of Ge Nanocones Formed on SiGe by Laser Radiation;Advanced Materials Research;2015-07
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