Gallium-related 0.875-eV photoluminescence defect spectrum in irradiated silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.6720/fulltext
Reference26 articles.
1. Aluminum and gallium impurity effects on the photoluminescence from electron irradiated, pulled silicon
2. New model of the irradiation-induced 0.97-eV (G) line in silicon: ACS−Si*complex
3. Carbon-related vibronic bands in electron-irradiated silicon
4. Excitation spectroscopy on the 0.79-eV (C) line defect in irradiated silicon
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