Carbon-Hydrogen-Oxygen Related Centre Responsible for the I-Line Luminescence System-Reference-Cited by-同舟云学术

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Carbon-Hydrogen-Oxygen Related Centre Responsible for the I-Line Luminescence System

Published:1996 Issue: Volume: Page:463-468
ISSN:
Container-title:Early Stages of Oxygen Precipitation in Silicon
language:
Short-container-title:

Author:

Gower J. E.,Lightowlers E. C.,Davies G.,Safonov A. N.

Publisher

Springer Netherlands

Link

http://link.springer.com/content/pdf/10.1007/978-94-009-0355-5_36.pdf

Reference7 articles.

1. Newman, R.C, (1985) Thermal donors in silicon: oxygen centres or self-interstitial aggregates, J.Phys.C .Solid State Phys. 18, L967–L972.

2. Minaev, N.S. & Mudyri, A.V. (1981) Thermally-induced defects in silicon containing oxygen and carbon, Phys Stat Solidi A 68, 561–566

3. Lightowlers, E.C., Newman, R.C, Tucker, J.H. (1994) Hydrogen-related luminescence centres in thermally treated Czochralski silicon, Semicond. Sci. Technol. 9, 1370–1374

4. Safonov, A.N., Lightowlers, E.C. & Davies, G. (1995) Carbon-hydrogen deep level luminescence centre in silicon responsible for the T-line, Materials Science Forum. Vols 196–201, 909–914

5. Irion,E., Bürger,N., Thonke.K. ,Sauer,R., (1985) The defect luminescence spectrum at 0.9351 eV in carbondoped heat-treated or irradiated silicon, J.Phys. C: Solid State Phys. 18, 5069–5082

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1. Silicon, photoluminescence data on defect spectra;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

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