Copper-related defects in silicon: Electron-paramagnetic-resonance identification
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.4620/fulltext
Reference29 articles.
1. Mobility of Impurity Ions in Germanium and Silicon
2. Transition metals in silicon
3. On the diffusion of Co in Si and its applicability to the Si intrinsic defect problem
4. A new photoluminescence band in silicon lightly doped with copper
5. Interaction of a Copper-Induced Defect with Shallow Acceptors and Deep Centers in Silicon
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