Gallium-isotope fine structure of impurity modes due to defect complexes in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.8525/fulltext
Reference66 articles.
1. The electronic structure of impurities and other point defects in semiconductors
2. Deep levels in semiconductors
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