Phonon characteristics of Si‐doped InAs grown by gas‐source molecular beam epitaxy-Reference-Cited by-同舟云学术

Phonon characteristics of Si‐doped InAs grown by gas‐source molecular beam epitaxy

Published:2019-07-31 Issue:11 Volume:50 Page:1731-1743
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J Raman Spectrosc

Author:

Talwar Devki N.¹²^ORCID,Lin Hao‐Hsiung³,Feng Zhe Chuan⁴

Affiliation:

1. Department of PhysicsUniversity of North Florida Jacksonville Florida USA

2. Department of PhysicsIndiana University of Pennsylvania Indiana Pennsylvania USA

3. Graduate Institute of Electronics Engineering and Department of Electrical EngineeringNational Taiwan University Taipei Taiwan, R.O.C.

4. Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and TechnologyGuangxi University Nanning China

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.5703

Reference58 articles.

1. (Invited) The Structure-Dependent Properties of InAs Nanowires and Their Devices

2. Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μm) with metal-metal resonators

3. InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

4. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

5. J.Devenson R.Teissier O.Cathabard A. N.Baranov Proc. of SPIE2008 6909 69090U.; Jan Devenson InAs/AlSb short wavelength quantum cascade lasers PhD Thesis: Institut d'Electronique du Sud University Montpellier II France 2010.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Shell thickness-dependent Au@Ag nanorods aggregates for rapid detection of thiram;Journal of Food Measurement and Characterization;2022-01-16

2. Recent advances in linear and nonlinear Raman spectroscopy. Part XIV;Journal of Raman Spectroscopy;2020-11-30

3. Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers;Materials Science and Engineering: B;2020-10