Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)-Reference-Cited by-同舟云学术

Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)

Published:2017-07-05 Issue:3 Volume:96 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lüpke Felix,Just Sven,Bihlmayer Gustav,Lanius Martin,Luysberg Martina,Doležal Jiří,Neumann Elmar,Cherepanov Vasily,Ošt'ádal Ivan,Mussler Gregor,Grützmacher Detlev,Voigtländer Bert

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.96.035301/fulltext

Reference28 articles.

1. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

2. Single-layer MoS2 transistors

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Topological surface states protected from backscattering by chiral spin texture

5. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

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