Anisotropic homogeneous linewidth of the heavy-hole exciton in (110)-oriented GaAs quantum wells-Reference-Cited by-同舟云学术

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Anisotropic homogeneous linewidth of the heavy-hole exciton in (110)-oriented GaAs quantum wells

Published:2013-07-08 Issue:4 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Singh Rohan,Autry Travis M.,Nardin Gaël,Moody Galan,Li Hebin,Pierz Klaus,Bieler Mark,Cundiff Steven T.

Funder

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.045304/fulltext

Reference37 articles.

1. Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures

2. Coherent spectroscopy of semiconductors

3. Observation of time-resolved picosecond stimulated photon echoes and free polarization decay in GaAs/AlGaAs multiple quantum wells

4. Optical characterization of interface disorder in multi-quantum well structures

5. Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells

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