Island formation in Sb films deposited at room temperature on Si(100)2×1 surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.17588/fulltext
Reference17 articles.
1. The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studies
2. Sb-induced bulk band transitions in Si(111) and Si(001) observed in synchrotron photoemission studies
3. Structure of the Sb‐terminated Si(100) surface
4. Surface extended x‐ray adsorption fine structure studies of the Si(001) 2×1–Sb interface
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1. The evolution of the Sb/Si interface at room temperature on the Si(1 1 1)-(7 × 7) and the Si(1 0 0)-(2 × 1) reconstructed surfaces;Applied Surface Science;2004-10
2. Electrical conductivity of surface phases on silicon;SPIE Proceedings;2003-06-16
3. Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis;Applied Surface Science;2000-10
4. Morphology of thin Sb layers grown on Si(111)7×7 at room temperature;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
5. Growth of Te thin films deposited at room temperature on the Si(100)2 × 1 surface;Journal of Electron Spectroscopy and Related Phenomena;1995-02
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