Growth of Te thin films deposited at room temperature on the Si(100)2 × 1 surface-Reference-Cited by-同舟云学术

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Growth of Te thin films deposited at room temperature on the Si(100)2 × 1 surface

Published:1995-02 Issue:1 Volume:71 Page:39-45
ISSN:0368-2048
Container-title:Journal of Electron Spectroscopy and Related Phenomena
language:en
Short-container-title:Journal of Electron Spectroscopy and Related Phenomena

Author:

Nardo S.Di,Lozzi L.,Passacantando M.,Picozzi P.,Santucci S.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Radiation,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Molecular-beam epitaxy of CdTe on large area Si(100)

2. Current status of direct growth of CdTe and HgCdTe on silicon by molecular-beam epitaxy

3. Cadmium telluride thin films on silicon substrates

4. The growth of Ge on a surface: surface catalytic epitaxy

5. Growth of Ge on a Te adsorbed Si(001) surface

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Energy Harvesting from Atomically Thin Co₂Te₃;The Journal of Physical Chemistry C;2022-06-27

2. Modulated carrier concentration and enhanced seebeck coefficient of Ge2Sb2Te5 thin films by Sn doping;Vacuum;2022-04

3. Nanoscale-Patterned Cr Films by Selective Etching Using a Heat-Mode Resist: Implications for X-ray Beam Splitter;ACS Applied Nano Materials;2021-12-26

4. UV-Induced Redox Conversion of Tellurite by Biacetyl;Environmental Science & Technology;2021-12-10

5. Thermoelectric properties of Sn doped GeTe thin films;Applied Surface Science;2020-03

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