Lateral tunneling in point contacts
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.3424/fulltext
Reference18 articles.
1. Quantized conductance of point contacts in a two-dimensional electron gas
2. One-dimensional transport and the quantisation of the ballistic resistance
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4. Lateral resonant tunneling in a double‐barrier field‐effect transistor
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1. Transport through side-coupled double quantum dots: From weak to strong interdot coupling;Physical Review B;2012-05-10
2. Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-09
3. Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots;Journal of Applied Physics;2002-10
4. Study of focused ion beam response of GaAs in the nanoscale regime;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
5. Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron gas system;Physica B: Condensed Matter;1999-12-01
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