Ionization-energy dependence on GaAs(001) surface superstructure measured by photoemission-yield spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.6076/fulltext
Reference21 articles.
1. Reconstructions of GaAs and AlAs surfaces as a function of metal to As ratio
2. LEED and AES studies of the initial growth of Ge epilayers on GaAs(100)
3. Angle-resolved photoemission study of GaAs(100) surfaces grown by molecular beam epitaxy
4. Work function measurements on MBE GaAs(001) layers
5. Effect of Phonon Energy Loss on Photoemissive Yield near Threshold
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