Angle-resolved photoemission study of GaAs(100) surfaces grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Angle-resolved photoemission study of GaAs(100) surfaces grown by molecular beam epitaxy

Published:1983 Issue:3 Volume:1 Page:736
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Salmon L. G.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ Auger probe enabling epitaxy composition control of alloys by elemental surface analysis;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05

2. Surface electronic structure of InSb(100) 4 × 1 studied by angle-resolved photoelectron spectroscopy;Surface Science;1995-07

3. Nitridation of GaAs single crystal surfaces using hydrazoic acid and 308 nm photon beams;Surface Science;1994-09

4. Two-dimensional electronic structureEi(ki∥,ki⊥) of GaAs(001) studied by angle-resolved photoemission;Physical Review B;1992-09-15

5. Surface photovoltage spectroscopy investigations of the electronic surface states on clean and oxygen-exposed polar GaAs(100) and GaAs(111) surfaces;Journal of Electron Spectroscopy and Related Phenomena;1990-09

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