Masking by weak localization of metallic behavior in a two-dimensional electron system in strong parallel magnetic fields-Reference-Cited by-同舟云学术

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Masking by weak localization of metallic behavior in a two-dimensional electron system in strong parallel magnetic fields

Published:2004-02-26 Issue:7 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lewalle A.,Pepper M.,Ford C. J. B.,Paul D. J.,Redmond G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.075316/fulltext

Reference28 articles.

1. Small-Angle Shubnikov–de Haas Measurements in a 2D Electron System: The Effect of a Strong In-Plane Magnetic Field

2. Spin Degree of Freedom in a Two-Dimensional Electron Liquid

3. Metallic behavior and related phenomena in two dimensions

4. An unexpected conducting phase in two dimensions

5. Interaction corrections at intermediate temperatures: Longitudinal conductivity and kinetic equation

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1. Signatures of localization in the effective metallic regime of high-mobility Si MOSFETs;Physical Review B;2014-09-08

2. CHANGE OF THERMOELECTRIC POWER OF LIQUID AlALLOYS CAUSED BY DC MAGNETIC FIELD;Acta Metallurgica Sinica;2013

3. Impact of Valley Polarization on the Resistivity in Two Dimensions;Physical Review Letters;2011-05-11

4. NEGATIVE MAGNETORESISTANCE OF A SILICON 2DEG UNDER IN-PLANE MAGNETIC FIELD DUE TO SPIN-SPLITTING OF UPPER SUBBANDS;International Journal of Modern Physics B;2009-05-20

5. Low-density spin-polarized transport in two-dimensional semiconductor structures: Temperature-dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field;Physical Review B;2005-11-03

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