NEGATIVE MAGNETORESISTANCE OF A SILICON 2DEG UNDER IN-PLANE MAGNETIC FIELD DUE TO SPIN-SPLITTING OF UPPER SUBBANDS-Reference-Cited by-同舟云学术

NEGATIVE MAGNETORESISTANCE OF A SILICON 2DEG UNDER IN-PLANE MAGNETIC FIELD DUE TO SPIN-SPLITTING OF UPPER SUBBANDS

Published:2009-05-20 Issue:12n13 Volume:23 Page:2938-2942
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

TAKASHINA K.¹,NIIDA Y.¹,RENARD V. T.¹,FUJIWARA A.¹,FUJISAWA T.¹,HIRAYAMA Y.²

Affiliation:

1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan

2. Department of Physics, Tohoku University, Aoba 6-3, Aramaki, Aoba-ku, Sendai, Miyagi, 980-8578, Japan

Abstract

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S021797920906258X

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