Temperature dependence of divacancy spin coherence in implanted silicon carbide-Reference-Cited by-同舟云学术

Temperature dependence of divacancy spin coherence in implanted silicon carbide

Published:2021-09-15 Issue:12 Volume:104 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lin Wu-Xi^ORCID,Yan Fei-Fei,Li Qiang^ORCID,Wang Jun-feng,Hao Zhi-He,Zhou Ji-Yang,Li Hao,You Li-Xing,Xu Jin-Shi^ORCID,Li Chuan-Feng^ORCID,Guo Guang-Can

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Fundamental Research Funds for the Central Universities

National Postdoctoral Program for Innovative Talents

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.125305/fulltext

Reference46 articles.

1. Quantum Spintronics: Engineering and Manipulating Atom-Like Spins in Semiconductors

2. Quantum computing with defects

3. Single defect centres in diamond: A review

4. Nitrogen-Vacancy Centers in Diamond: Nanoscale Sensors for Physics and Biology

5. Room-temperature coherent coupling of single spins in diamond

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid quantum sensing in diamond;Frontiers in Physics;2024-02-14

2. Room temperature coherent control of a single solid-state spin under anti-Stokes excitation;Physical Review B;2023-12-26

3. Quantum systems in silicon carbide for sensing applications;Reports on Progress in Physics;2023-12-20

4. Physically motivated analytical expression for the temperature dependence of the zero-field splitting of the nitrogen-vacancy center in diamond;Physical Review B;2023-11-08

5. Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC;Materials Research Express;2023-11-01