Zero-Field ODMR and relaxation of Si-vacancy centers in 6H-SiC

Author:

Singh HarpreetORCID,Anisimov Andrey NORCID,Baranov Pavel GORCID,Suter DieterORCID

Abstract

Abstract Silicon vacancies in silicon carbide (SiC) have been proposed as interesting candidates for quantum technology applications such as quantum sensing and quantum repeaters. SiC exists in many polytypes with different plane stacking sequences, and in each polytype, the vacancies can occupy a variety of different lattice sites. In this work, we focus on the three important charged silicon vacancies in the 6H-SiC polytype. We record the photoluminescence and continuous-wave optically detected magnetic resonance (ODMR) spectra at different radio-frequency power levels and different temperatures. We individually select the zero-phonon lines of the different silicon vacancies at low temperatures and record the corresponding ODMR spectra. ODMR allows us to correlate optical and magnetic resonance spectra and thereby separate signals from V 1 and V 3. The results also explain the observed sign change of the ODMR signal as a function of temperature.

Funder

ICRC

Deutsche Forschungsgemeinschaft

RFBR

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3