Scanning-probe-induced defects in thinSiO2film onSi: Comparison withSiclusters
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.073306/fulltext
Reference31 articles.
1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2. Reliability limits for the gate insulator in CMOS technology
3. Nature of theE’ deep hole trap in metal‐oxide‐semiconductor oxides
4. Experimental evidence for two fundamentally different E′ precursors in amorphous silicon dioxide
5. Optical absorption in ultrathin silicon oxide films near theSiO2/Si interface
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