Nanoindentation: Depth dependence of silicon hardness studied within contact theory-Reference-Cited by-同舟云学术

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Nanoindentation: Depth dependence of silicon hardness studied within contact theory

Published:2003-09-12 Issue:12 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hebbache M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.125310/fulltext

Reference41 articles.

1. An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments

2. Vickers Indentation Curves of Magnesium Oxide (MgO)

3. A method for interpreting the data from depth-sensing indentation instruments

4. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Topographic reconstruction and mechanical analysis of atomic layer deposited Al2O3/TiO2 nanolaminates by nanoindentation;Materials & Design;2016-12

2. Analysis of thin films exhibiting large plastic deformation during nanoindentation: A modified Winkler approach;Journal of Materials Research;2015-06-23

3. Physical and mechanical properties of silicon near the SiO2/Si interface;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2013-11

4. Determining Hardness and Elastic Modulus of Asphalt by Nanoindentation;International Journal of Geomechanics;2010-06

5. Nanoindentation: hardness and phase transition in silicon;Materials Science and Engineering: A;2004-12

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