Strain and electronic structure of Ge nanoislands on Si(111)-7×7surface
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.235325/fulltext
Reference24 articles.
1. Ge on Si(001)––a hetero epitaxial playground for surface science
2. Electronic structure of ultrathin Ge layers buried in Si(100)
3. Optical properties of Ge self-organized quantum dots in Si
4. Intraband absorption in Ge/Si self-assembled quantum dots
5. Photoluminescence study of Si/Ge quantum dots
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1. Ag-induced √3 reconstruction on Si(111)/Ge-(5 × 5) and the surfactant behavior of Ag in further growth of Ge;Applied Surface Science;2015-11
2. Identification of Si and Ge atoms by atomic force microscopy;Physical Review B;2015-10-09
3. Controllable growth of low-dimensional nanostructures on well-defined surfaces;Chinese Physics B;2013-09
4. 研究グループ紹介：横浜市立大学大学院 生命ナノシステム科学研究科 ナノシステム科学専攻 表面科学研究室;IEEJ Transactions on Fundamentals and Materials;2010
5. LOCAL ELECTRONIC STATES ON TWO-DIMENSIONAL NANOSCALE ISLAND OF Si AND Ge FABRICATED ON Si(111) 7 × 7 SUBSTRATE;International Journal of Nanoscience;2009-12
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