Bistability of the Te donor in AlSb:Te bulk crystals
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.4341/fulltext
Reference16 articles.
1. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
2. Heterojunction field‐effect transistors based on AlGaSb/InAs
3. A new GaSb/AlSb/GaSb/AlSb/InAs double‐barrier interband tunneling diode and its tunneling mechanism
4. Growth and characterization of high current density, high‐speed InAs/AlSb resonant tunneling diodes
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