Hyperfine Stark effect of shallow donors in silicon-Reference-Cited by-同舟云学术

Hyperfine Stark effect of shallow donors in silicon

Published:2014-11-18 Issue:19 Volume:90 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pica Giuseppe,Wolfowicz Gary,Urdampilleta Matias,Thewalt Mike L. W.,Riemann Helge,Abrosimov Nikolai V.,Becker Peter,Pohl Hans-Joachim,Morton John J. L.,Bhatt R. N.,Lyon S. A.,Lovett Brendon W.

Funder

Engineering and Physical Sciences Research Council

National Science Foundation

Seventh Framework Programme

European Research Council

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.90.195204/fulltext

Reference49 articles.

1. Silicon quantum electronics

2. Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28

3. Electron spin coherence exceeding seconds in high-purity silicon

4. Single-shot readout of an electron spin in silicon

5. High-fidelity readout and control of a nuclear spin qubit in silicon

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