Migration mechanisms and diffusion barriers of carbon and native point defects in GaN
Author:
Funder
U.S. Army Research Laboratory
Army Research Office
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.245201/fulltext
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1. Prospects for LED lighting
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3. InGaN/GaN multiple quantum well concentrator solar cells
4. Diffusivity of native defects in GaN
5. Properties of threading screw dislocation core in wurtzite GaN studied by Heyd-Scuseria-Ernzerhof hybrid functional
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