Reconstruction, step ordering, and frustration on vicinal GaAs surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.14683/fulltext
Reference34 articles.
1. ‘‘Magic’’ vicinal surfaces stabilized by reconstruction
2. Step-driven lateral segregation and long-range ordering duringSixGe1−xepitaxial growth
3. Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double‐heterojunctionNpNbipolar transistors grown by molecular beam epitaxy
4. Optical characterization of interface disorder in multi-quantum well structures
5. Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Self-Organized Nanoscale Pattern Formation on Vicinal Si(111) Surfaces via a Two-Stage Faceting Transition;Physical Review Letters;2002-02-15
2. Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces;Journal of Applied Physics;1997-04
3. Origin of the Blue Shift Observed in Highly Strained (Ga, In)As Quantum Wells Grown on GaAs(001) Vicinal Surfaces;Japanese Journal of Applied Physics;1995-07-15
4. Surface structure transitions on InAs and GaAs (001) surfaces;Physical Review B;1995-04-15
5. Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates;Superlattices and Microstructures;1994-03
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