Light emission from direct band gap germanium containing split-interstitial defects-Reference-Cited by-同舟云学术

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Light emission from direct band gap germanium containing split-interstitial defects

Published:2021-02-25 Issue:8 Volume:103 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Murphy-Armando F.^ORCID,Brehm M.^ORCID,Steindl P.^ORCID,Lusk M. T.^ORCID,Fromherz T.,Schwarz K.^ORCID,Blaha P.^ORCID

Funder

Austrian Science Fund

Science Foundation Ireland

Ministerstvo Školství, Mládeže a Tělovýchovy

Horizon 2020

Linz Institute of Technology

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.103.085310/fulltext

Reference44 articles.

1. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates

2. Lasing in direct-bandgap GeSn alloy grown on Si

3. Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

4. Electrically injected GeSn lasers on Si operating up to 100 K

5. Analysis of enhanced light emission from highly strained germanium microbridges

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