Dynamic change in the surface and layer structures during epitaxial growth of Si on aSi(111)−7×7surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.13000/fulltext
Reference16 articles.
1. Observation of Initial Growth Stage of Amorphous Si Film Deposited on 7×7 Superlattice Surface of Si(111) by Low-Energy Electron Diffraction
2. Scanning-tunneling-microscopy study of surface morphology at the initial growth stage of Si on a 7×7 superlattice surface of Si(111)
3. A characteristic feature of crystalline thin-film growth of Si on a 7 × 7 superlattice surface of Si(111)
4. Influence of Surface Structure on Epitaxial Growth of Si on Si(111)-(7 × 7) Substrate
5. Formation of uniform nanoscale Si islands on a Si(111)-7×7 substrate
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