A characteristic feature of crystalline thin-film growth of Si on a 7 × 7 superlattice surface of Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Observation of Initial Growth Stage of Amorphous Si Film Deposited on 7×7 Superlattice Surface of Si(111) by Low-Energy Electron Diffraction
2. Critical thickness for growth of epitaxial grains in silicon film deposited on superlattice surface of silicon (111)
3. Scanning-tunneling-microscopy study of surface morphology at the initial growth stage of Si on a 7×7 superlattice surface of Si(111)
4. Annealing effect on an amorphous Si film deposited on a 7×7 superlattice surface of Si(111) studied with low‐energy electron diffraction
5. An Introduction to Thin Film;Maissel,1973
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1. LOCAL ELECTRONIC STATES ON TWO-DIMENSIONAL NANOSCALE ISLAND OF Si AND Ge FABRICATED ON Si(111) 7 × 7 SUBSTRATE;International Journal of Nanoscience;2009-12
2. Growth of metallic Au adsorbed islands on the Si(111)-(7 × 7) substrate;Journal of Physics: Conference Series;2007-04-01
3. Strain and electronic structure of Ge nanoislands on Si(111)-7×7surface;Physical Review B;2005-12-20
4. STUDY OF STRUCTURE CHANGES ON THESiSURFACES USING REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;International Journal of Modern Physics B;2004-01-30
5. Growth of nanoscale Ge magic islands on Si()-7×7 substrate;Surface Science;2003-08
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