Antimony adsorption on InAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.4544/fulltext
Reference38 articles.
1. Adsorption of group-V elements on III–V (1 1 0) surfaces
2. Structure of the GaAs(110) surface in As-rich conditions
3. Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structure
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1. Electrochemical Deposition of Antimony on Single-Crystal Gallium Nitride(0001) Electrode: Nucleation and Growth Mechanism;Journal of The Electrochemical Society;2015
2. Bi-covered InAs(110) surfaces: An ab initio study;Surface Science;2004-09
3. Electrodeposition of Sb onto the low-index planes of Cu in aqueous chloride solutions: studies by LEED, AES and electrochemistry;Physical Chemistry Chemical Physics;2001
4. Morphological, Structural and Electronic Damage on InAs and InSb Surfaces Induced by (Reactive) Ion Beam Etching;Defect and Diffusion Forum;2000-08
5. Metal-induced gap states at InAs(110) surface;Surface Science;2000-05
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