Strain-related phenomena in GaN thin films-Reference-Cited by-同舟云学术

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Strain-related phenomena in GaN thin films

Published:1996-12-15 Issue:24 Volume:54 Page:17745-17753
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kisielowski C.,Krüger J.,Ruvimov S.,Suski T.,Ager J. W.,Jones E.,Liliental-Weber Z.,Rubin M.,Weber E. R.,Bremser M. D.,Davis R. F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.17745/fulltext

Reference36 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

3. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

5. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

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2. Advanced Mechanical Transfer of Micro-LEDs Enabled by Structurally Modified Wide Sapphire Nanomembranes through Thermal Reflow of Photoresist;ACS Applied Materials & Interfaces;2024-08-05

3. High-performance GaN ultraviolet polarization-sensitive photodetector based on ferroelectric polarization LiNbO3;Applied Physics Letters;2024-08-05

4. Structural and optical characterizations of cubic GaN layers grown by MOVPE on GaAs(114) substrate;Optical Materials;2024-08

5. Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs;Optics Express;2024-07-31

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